Polymorphism of the Blocking TiO 2 Layer Deposited on F:SnO 2 and Its Influence on the Interfacial Energetic Alignment - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physical Chemistry C Année : 2017

Polymorphism of the Blocking TiO 2 Layer Deposited on F:SnO 2 and Its Influence on the Interfacial Energetic Alignment

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hal-02164067 , version 1 (24-06-2019)

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Shan-Ting Zhang, Hervé Roussel, Odette Chaix-Pluchery, Michel Langlet, David Munoz-Rojas, et al.. Polymorphism of the Blocking TiO 2 Layer Deposited on F:SnO 2 and Its Influence on the Interfacial Energetic Alignment. Journal of Physical Chemistry C, 2017, 121 (32), pp.17305-17313. ⟨10.1021/acs.jpcc.7b04893⟩. ⟨hal-02164067⟩
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