Domain-related origin of magnetic relaxation in compressively strained manganite thin films - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2012

Domain-related origin of magnetic relaxation in compressively strained manganite thin films

Résumé

Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.
Fichier principal
Vignette du fichier
APL_101_012408_manganites_2012.pdf (1.85 Mo) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02162385 , version 1 (21-06-2019)

Identifiants

Citer

S R Bakaul, B F Miao, W Lin, W. Hu, A David, et al.. Domain-related origin of magnetic relaxation in compressively strained manganite thin films. Applied Physics Letters, 2012, 101, pp.012408. ⟨10.1063/1.4733320⟩. ⟨hal-02162385⟩
8 Consultations
98 Téléchargements

Altmetric

Partager

More