M. Kabe and al. / Simulation and optimization of the nSiC layer in a nSiC/Si photovoltaic cell Simulation and optimization of the nSiC layer's thickness in a nSiC/Si photovoltaic cell - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials and Devices Année : 2019

M. Kabe and al. / Simulation and optimization of the nSiC layer in a nSiC/Si photovoltaic cell Simulation and optimization of the nSiC layer's thickness in a nSiC/Si photovoltaic cell

Résumé

Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell's behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance.
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Dates et versions

hal-02151291 , version 1 (07-06-2019)

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M Kabe, Y. Lare, L. Ottaviani, M. Pasquinelli, D Barakel. M. Kabe and al. / Simulation and optimization of the nSiC layer in a nSiC/Si photovoltaic cell Simulation and optimization of the nSiC layer's thickness in a nSiC/Si photovoltaic cell. Materials and Devices, 2019, 4 (1), ⟨10.23647/ca.md20193103⟩. ⟨hal-02151291⟩
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