Growth and Memory effect of Ge in GaAs epilayers grown in UHV environment using IBGe
Résumé
The growth of Germanium (Ge) with iso-butyl germane (IBGe) as germanium source and the study of Ge memory effect in GaAs grown in UHV environment (Chemical beam epitaxy CBE reactor) is presented. High quality Ge epilayers were grown and a strong Ge memory effect was found in GaAs epilayers grown in the same reactor.
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istdm-icsi_abstract_Alex Brice.pdf (188.81 Ko)
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istdm-icsi_abstract_Alex Brice.doc (169 Ko)
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