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Communication Dans Un Congrès Année : 2017

An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions

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hal-02143370 , version 1 (29-05-2019)

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  • HAL Id : hal-02143370 , version 1

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M. Cassé, J. Pelloux-Prayer, Z. Zeng, Y.-M Niquet, F. Triozon, et al.. An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, France. pp.1-3. ⟨hal-02143370⟩
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