Electrical resistivity under pressure and thermal expansion of LaPt 2 Si 2 single crystal - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2019

Electrical resistivity under pressure and thermal expansion of LaPt 2 Si 2 single crystal

Résumé

We have performed electrical transport under pressure and thermal expansion measurements on a LaPt2Si2 single crystal. The charge density wave (CDW) transition temperature TCDW decreases, while the superconducting transition temperature TC increases with the application of pressure, which confirms the competing nature of the two phases. We present an attempt to understand the pressure (⁠P⁠) dependence of TCDW within the framework of the mean field theory. A well defined anomaly in temperature-dependent relative thermal expansion (⁠ΔL/L0 ⁠) and the linear thermal expansion coefficient (⁠αa ⁠) has been observed around TCDW associated with the structural transformation accompanied by a CDW transition.
Fichier principal
Vignette du fichier
143902_1_online.pdf (550.85 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-02129079 , version 1 (24-08-2023)

Identifiants

Citer

Ritu Gupta, A. Thamizhavel, Pierre Rodière, S. Nandi, P. Rajeev, et al.. Electrical resistivity under pressure and thermal expansion of LaPt 2 Si 2 single crystal. Journal of Applied Physics, 2019, 125 (14), pp.143902. ⟨10.1063/1.5091784⟩. ⟨hal-02129079⟩

Collections

UGA CNRS NEEL
24 Consultations
13 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More