Electrical resistivity under pressure and thermal expansion of LaPt 2 Si 2 single crystal
Résumé
We have performed electrical transport under pressure and thermal expansion measurements on a LaPt2Si2
single crystal. The charge density wave (CDW) transition temperature TCDW decreases, while the superconducting transition temperature TC increases with the application of pressure, which confirms the competing nature of the two phases. We present an attempt to understand the pressure (P) dependence of TCDW within the framework of the mean field theory. A well defined anomaly in temperature-dependent relative thermal expansion (ΔL/L0
) and the linear thermal expansion coefficient (αa ) has been observed around TCDW associated with the structural transformation accompanied by a CDW transition.
Origine : Fichiers éditeurs autorisés sur une archive ouverte