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Article Dans Une Revue International Journal of Power Electronics Année : 2019

Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Résumé

To effectively simulate the electrical characteristics of an IGBT, it is necessary to have a good model for applications operating in a wide range of temperatures. A new model of the on-state forward characteristics of an IGBT was developed and validated in MAST language in static mode using the SABER simulator. A particular attention was given to temperature dependence, based on the physical analysis of semiconductor device regions and the use of local and physic-based relations. The model was compared to experimental results and to the standard Hefner model. The validation of the model shows a good agreement between measurements and simulation. A clear improvement in the accuracy of the on-state characteristic temperature dependence with the was obtained.

Domaines

Electronique
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Dates et versions

hal-02121811 , version 1 (06-05-2019)

Identifiants

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Layachi Boussouar, Hervé Morel, Bruno Allard, Cyril Buttay. Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT. International Journal of Power Electronics, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩. ⟨hal-02121811⟩
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