Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p -type layers - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2002

Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p -type layers

R. J Koval
  • Function : Author
G. M Ferreira
  • Function : Author
A. S Ferlauto
  • Function : Author
J. M Pearce
  • Function : Author
P. I Rovira
  • Function : Author
C R Wronski
  • Function : Author
R. W Collins
  • Function : Author

Abstract

In studies of hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells fabricated by rf plasma-enhanced chemical vapor deposition PECVD, we have found that the maximum open circuit voltage (V oc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum hydrogen-to-silane flow ratio possible without crossing the thickness-dependent transition into the mixed-phase (amorphousmicrocrystalline) growth regime for the 200 Å player thickness. The strong dependence of the player phase and solar cell V oc on the underlying i-layer phase also confirms the protocrystalline nature of the optimum Si:H p layer.
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hal-02120550 , version 1 (06-05-2019)

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R. J Koval, Chi Chen, G. M Ferreira, A. S Ferlauto, J. M Pearce, et al.. Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p -type layers. Applied Physics Letters, 2002, 81 (7), pp.1258-1260. ⟨10.1063/1.1499735⟩. ⟨hal-02120550⟩
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