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Article Dans Une Revue Applied Physics Letters Année : 1997

Type II recombination and band offset determination in a tensile strained InGaAs quantum well

Résumé

Photoluminescence measurements under different excitation powers and time-resolved photoluminescence experiments were carried out at low temperature on tensile strained In0.3Ga0.7As quantum wells with InGaAs barriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in the lattice matched one. This study allows us to propose a precise Determination of the light holes band offset in the In0.3Ga0.7As/In0.53Ga0.47As system.
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hal-02111475 , version 1 (26-04-2019)

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C. Lugand, T. Benyattou, G. Guillot, T. Venet, M. Gendry, et al.. Type II recombination and band offset determination in a tensile strained InGaAs quantum well. Applied Physics Letters, 1997, 70 (24), pp.3257-3259. ⟨10.1063/1.119140⟩. ⟨hal-02111475⟩
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