Hybrid MBE-CBE Growth and Characterization of Al 0.48 In 0.52 As on InP(100) for avalanche photodiode applications Motivation - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Hybrid MBE-CBE Growth and Characterization of Al 0.48 In 0.52 As on InP(100) for avalanche photodiode applications Motivation

Résumé

In this work, we demonstrate the epitaxial growth of high quality, low strain and low background doping of Al0.48In0.52As at 500°C on Fe-doped semi-insulating InP(100) substrate by using hybrid MBE-CBE technique. The precursors that were used are: solid aluminum, solid indium, TriMethylIndium (TMIn) and thermally cracked arsine. Using Nomarski, we observed smooth surfaces for the as grown layers. High-Resolution X-ray Diffraction (HR-XRD) in the vicinity of the (004) reflexion shows a lattice mismatch in the range -137 to 127ppm. The carrier density of undoped layers, obtained by Hall measurement at room temperature, is as low as 3E+15 cm-3 which is three orders of magnitude lower than the identical layers grown by organometallics sources. Photoluminescence (PL) for Al0.48In0.52As at low temperature (LT) shows a good optical quality. The quality and purity of the alloys grown here are compatible with high performance APD for optical communication.
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Dates et versions

hal-02109061 , version 1 (24-04-2019)

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  • HAL Id : hal-02109061 , version 1

Citer

Thierno Mamoudou Diallo, Alex Brice Poungoué Mbeunmi, M. El-Gahouchi, M. Jellite, R. Arès, et al.. Hybrid MBE-CBE Growth and Characterization of Al 0.48 In 0.52 As on InP(100) for avalanche photodiode applications Motivation. North American Molecular Beam Epitaxy (NAMBE 2018), Sep 2018, Banff, Canada. ⟨hal-02109061⟩
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