Measured output voltages of ~24V from photovoltaic devices designed with the vertical epitaxial heterostructure architecture (VEHSA) grown monolithically with 20 ultra-thin p/n junctions by MOCVD - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Measured output voltages of ~24V from photovoltaic devices designed with the vertical epitaxial heterostructure architecture (VEHSA) grown monolithically with 20 ultra-thin p/n junctions by MOCVD

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hal-02098363 , version 1 (12-04-2019)

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  • HAL Id : hal-02098363 , version 1

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S. Fafard, L. Richard, F. Proulx, M. York, P.-O. Provost, et al.. Measured output voltages of ~24V from photovoltaic devices designed with the vertical epitaxial heterostructure architecture (VEHSA) grown monolithically with 20 ultra-thin p/n junctions by MOCVD. International Conference On Metal Organic Vapor Phase Epitaxy (MOVPE), Jul 2016, San Diego, United States. ⟨hal-02098363⟩
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