Characterization of a new HV/HR CMOS Sensor in LF150nm Process for the ATLAS Inner Tracker Upgrade
Résumé
A HV/HR CMOS detector prototype called LF-CPIX, has been designed in LFoundry 150nm technology. The front-end electronics has been implemented using both NMOS and PMOS transistors, inside the charge collection diode, with a pitch of 250 μm × 50 μm. This demonstrator is an implementation of a matrix of smart pixels where the diode is composed by a Deep Nwell, and P-type substrate is used as a depleted sensor. Three types of pixels have been developed: passive pixels, analog-digital pixels, analog pixels. The analog pixels can be connected to the FE-I4 IC, which is the present readout IC of the innermost ATLAS pixel layers. The different versions of the LF-CPIX demonstrators are described, characterization of the different pre-amplifiers flavors with external injection signal and55Fe source are presented for the digital pixels. Finally radiation hardness results are discussed.
Mots clés
Semiconductor device measurement
Tuning
Preamplifiers
Dispersion
Noise measurement
CMOS technology
MOS devices
CMOS image sensors
nuclear electronics
position sensitive particle detectors
readout electronics
HV/HR CMOS detector prototype
front-end electronics
charge collection diode
smart pixels
Deep Nwell
P-type substrate
depleted sensor
passive pixels
analog-digital pixels
FE-I4 IC
readout IC
innermost ATLAS pixel layers
LF-CPIX demonstrators
different pre-amplifiers flavors
HV/HR CMOS sensor
LF150nm Process
ATLAS inner tracker upgrade
LFoundry technology
NMOS transistor
PMOS transistor
external injection signal
55Fe source
size 150.0 nm
size 250.0 mum
size 50.0 mum
tracking detector: upgrade
semiconductor detector: technology
semiconductor detector: pixel
electronics: readout
radiation: damage
ATLAS
integrated circuit
performance