Communication Dans Un Congrès Année : 2016

High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications

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hal-02097329 , version 1 (11-04-2019)

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  • HAL Id : hal-02097329 , version 1

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Mohamed Ridaoui, Alain-Bruno Fadgie-Djomkam, Matej Pastorek, Nicolas Wichmann, Abdelatif Jaouad, et al.. High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications. EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Oct 2016, Londres, United Kingdom. ⟨hal-02097329⟩
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