Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: electrical resistivity and device modelling - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017
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hal-02096910 , version 1 (11-04-2019)

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  • HAL Id : hal-02096910 , version 1

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M N Beattie, y A Bioud, A. Boucherif, D G. Hobson, R. Arès, et al.. Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: electrical resistivity and device modelling. Photonic North, Jun 2017, Ottawa, Canada. ⟨hal-02096910⟩
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