Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2012

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

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Electronique

Dates et versions

hal-02092993 , version 1 (08-04-2019)

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M. Valenza, J. El Husseini, Frédéric Martinez, M. Bawedin, C. Le Royer, et al.. Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique. Solid-State Electronics, 2012, 70, pp.27-32. ⟨10.1016/j.sse.2011.11.016⟩. ⟨hal-02092993⟩
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