Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(001) - Archive ouverte HAL
Article Dans Une Revue Physica E: Low-dimensional Systems and Nanostructures Année : 2006

Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(001)

Résumé

Optical transitions in self-organized InAs quantum dots (QDs) grown on In0.52Al0.48As layer lattice matched to InP(0 0 1) substrate, have been studied by continuous wave (cw) photoluminescence (PL) and time-resolved PL. The dependence of the PL transition on excitation power and photoluminescence excitation measurements clearly shows that the multi-component cw-PL spectrum is related to emission coming from ground and related excited states of QDs with heights varying by monolayer fluctuations. While decay times measured by time-resolved PL are in the nanosecond range for the ground states, shorter decay times related to relaxation of carriers down directly to the ground state are determined for the excited states.

Dates et versions

hal-02088441 , version 1 (02-04-2019)

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Citer

B. Salem, G. Bremond, G. Guillot, Michel Gendry, A. Jbeli, et al.. Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(001). Physica E: Low-dimensional Systems and Nanostructures, 2006, 31 (2), pp.232-234. ⟨10.1016/j.physe.2005.12.155⟩. ⟨hal-02088441⟩
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