Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2016
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hal-02073088 , version 1 (19-03-2019)

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L. Wang, J. Chauveau, R. Brenier, V. Sallet, F. Jomard, et al.. Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy. Applied Physics Letters, 2016, 108 (13), pp.132103. ⟨10.1063/1.4945100⟩. ⟨hal-02073088⟩
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