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Communication Dans Un Congrès Année : 2015

2D TCAD strain simulations from fully depleted to nanowire transistors: efficiency of mechanical stressors

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hal-02068482 , version 1 (15-03-2019)

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  • HAL Id : hal-02068482 , version 1

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A. Idrissi-El Oudrhiri, S. Martinie, Jean-Charles Barbé, Marie-Anne Jaud, Joris Lacord, et al.. 2D TCAD strain simulations from fully depleted to nanowire transistors: efficiency of mechanical stressors. GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France. ⟨hal-02068482⟩
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