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Communication Dans Un Congrès Année : 2015

Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier

Résumé

A full-quantum simulation of the electron transport in the two-dimensional electron gas (2DEG) of a AlGaN/GaN/InAlN/GaN heterostructure is carried out using the non-equilibrium Green function (NEGF) approach. The introduction of the InAlN back-barrier and the use of a ultra-thin GaN layer for the charge transport considerably entangles the physics of the device. A full-quantum approach is then deemed necessary to shed light on the transport properties of these devices. Gate-length and channel-thickness scaling are studied to assess the impact of confinement effects on the elctrostatic integrity of the device.
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Dates et versions

hal-02067223 , version 1 (14-03-2019)

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Luca Lucci, Jean-Charles Barbé, Marco Pala. Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩. ⟨hal-02067223⟩
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