Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs

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Electronique
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Dates et versions

hal-02066884 , version 1 (13-03-2019)

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  • HAL Id : hal-02066884 , version 1

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Frédéric Martinez, Guillaume Neau, Matteo Valenza, J.C. Vildeuil. Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs. Ultimate integration on silicon, 2006, Grenoble, France. ⟨hal-02066884⟩
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