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Communication Dans Un Congrès Année : 2005

Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency Noise

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Electronique
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hal-02066777 , version 1 (13-03-2019)

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Frédéric Martinez, C Leyris, Matteo Valenza, Alain Hoffmann, F Boeuf, et al.. Effect of Oxide Thickness and Nitridation Process on PMOS Gate and Drain Low Frequency Noise. International Conference on Noise and Fluctuations, 2005, Salamanca (Spain), Spain. pp.323-326, ⟨10.1063/1.2036760⟩. ⟨hal-02066777⟩
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