Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2010

Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETs

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Electronique
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hal-02064876 , version 1 (12-03-2019)

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  • HAL Id : hal-02064876 , version 1

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J. Gyani, Frédéric Martinez, S. Soliverès, M. Valenza, C. Le Royer, et al.. Impact of Process Options on Low Frequency Noise in Germanium on- Insulator (GeOI) high-K & Metal Gate pMOSFETs. International Conference on Ultimate Integration on Silicon, 2010, Glasgow, United Kingdom. ⟨hal-02064876⟩
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