1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-02063016 , version 1 (10-03-2019)

Identifiants

Citer

J. Gyani, Frédéric Martinez, S. Soliverès, M. Valenza, C. Le Royer, et al.. 1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers. NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009), 2009, Pisa (Italy), Italy. pp.259-262, ⟨10.1063/1.3140445⟩. ⟨hal-02063016⟩
18 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More