InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2019

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

X. Chevalier
  • Fonction : Auteur
G. Lombard
  • Fonction : Auteur

Résumé

We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (0 0 1)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20 nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30 nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15 nm spaced by almost 10 nm. Early electrical characterizations exhibit a current flow through the connected fins.
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Dates et versions

hal-02055424 , version 1 (21-10-2021)

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Paternité - Pas d'utilisation commerciale

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Citer

T. Cerba, P. Hauchecorne, M. Martin, J. Moeyaert, R. Alcotte, et al.. InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET. Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩. ⟨hal-02055424⟩
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