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Communication Dans Un Congrès Année : 2009

Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

Résumé

We present a numerical low frequency noise modeling related to oxide trapping/detrapping process, based on green's function formulation and its application to ultrathin oxide characterization. This model allows slow trap density profiles to be determined. The model was applied in the investigation of the validity of the flat band voltage fluctuation model in the case of thin oxides. Numerical gate current noise modeling was applied to the characterization of nitridation-induced traps. Finally, 2D model was applied in the investigation of low-frequency degradation of MOSFETs stressed by hot-carriers, and the generated slow oxide trap density profiles were deduced.

Domaines

Electronique
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Dates et versions

hal-02052981 , version 1 (28-02-2019)

Identifiants

  • HAL Id : hal-02052981 , version 1

Citer

Frédéric Martinez, M. Valenza, Jimmy Armand. Numerical modeling of low frequency noise in ultrathin oxide MOSFETs. Noise and fluctuations : 20th International Conference on Noise and Fluctuations : ICNF 2009, Jun 2009, Pisa, Italy. pp.285-290. ⟨hal-02052981⟩
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