Communication Dans Un Congrès Année : 2018

Experimental and theoretical investigation of RRAM endurance statistical behavior

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hal-02052290 , version 1 (28-02-2019)

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  • HAL Id : hal-02052290 , version 1

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D. Alfaro Robayo, G. Sassine, Quentin Rafhay, Gérard Ghibaudo, Gabriel Molas, et al.. Experimental and theoretical investigation of RRAM endurance statistical behavior. 49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2. ⟨hal-02052290⟩
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