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Communication Dans Un Congrès Année : 2015

Development of analytical compact drain current model for28 nm FDSOI MOSFETs

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hal-02051762 , version 1 (28-02-2019)

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  • HAL Id : hal-02051762 , version 1

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T.A. Karatsori, Andreas Tsormpatzoglou, Christoforos Theodorou, E.G. Ioannidis, Sebastien Haendler, et al.. Development of analytical compact drain current model for28 nm FDSOI MOSFETs. 4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece. ⟨hal-02051762⟩
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