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Communication Dans Un Congrès Année : 2018

Doping profile extraction in thin SOI films: Application to A2RAM

Résumé

We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.

Dates et versions

hal-02050322 , version 1 (27-02-2019)

Identifiants

Citer

F. Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, et al.. Doping profile extraction in thin SOI films: Application to A2RAM. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩. ⟨hal-02050322⟩
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