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Communication Dans Un Congrès Année : 2016

Improved analysis of NBTI relaxation behavior based on fast I–V measurement

Résumé

In this paper, we propose a qualitative analysis of NBTI recoverable components measured on pFET devices issued from various ST Microelectronics (28nm FDSOI technology and 40nm SION or Bulk) technologies. NBTI degradation and recovery resulting from DC stress are measured at μs time scale. We observed similarities between temperature and Vg recovery dependencies on NBTI relaxation of SiON and FDSOI technologies. Then, we discuss the nature of one defect type responsible for the NBTI at early stage of relaxation.
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Dates et versions

hal-02050198 , version 1 (27-02-2019)

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D. Nouguier, C. Ndiaye, G. Ghibaudo, X. Federspiel, M. Rafik, et al.. Improved analysis of NBTI relaxation behavior based on fast I–V measurement. 2016 IEEE International Integrated Reliability Workshop (IIRW), Oct 2016, South Lake Tahoe, United States. pp.83-86, ⟨10.1109/IIRW.2016.7904908⟩. ⟨hal-02050198⟩
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