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Communication Dans Un Congrès Année : 2015

Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

Résumé

A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.
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Dates et versions

hal-02049860 , version 1 (26-02-2019)

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G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, et al.. Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution. 2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.134-137, ⟨10.1109/IIRW.2015.7437086⟩. ⟨hal-02049860⟩
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