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Communication Dans Un Congrès Année : 2015

Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

Résumé

In this paper, a full front and back split C-V characterization of FDSOI devices and associated methodology to accurately extract the EOT (Equivalent oxide thickness) of the front and back (BOX) oxide as well as the channel thickness are presented for the first time.
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Dates et versions

hal-02049810 , version 1 (26-02-2019)

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B. Mohamad, G. Ghibaudo, C. Leroux, E. Josse, G. Reimbold. Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.4, ⟨10.1109/S3S.2015.7333546⟩. ⟨hal-02049810⟩
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