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Communication Dans Un Congrès Année : 2015

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

Karen Dabertrand
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Vincent Joseph
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Résumé

In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WF eff ) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WF eff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WF eff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).
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Dates et versions

hal-02049792 , version 1 (26-02-2019)

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Citer

Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, et al.. Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. 2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.246-249, ⟨10.1109/ESSDERC.2015.7324760⟩. ⟨hal-02049792⟩
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