Communication Dans Un Congrès Année : 2015

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

Résumé

This paper provides a compact model for performance and process variability assessment in 14nm FDSOI CMOS technology. It is used to investigate MOS performance relation with process parameters. Then production device within wafer variability has been modeled using backward propagation of variance (BPV). This application allows spotting the main model parameter contributing to the total MOS transistor resistance (Ron) variability.

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Dates et versions

hal-02049575 , version 1 (26-02-2019)

Identifiants

Citer

Y. Denis, F. Monsieur, G. Ghibaudo, J. Mazurier, E. Josse, et al.. New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology. 2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.59-64, ⟨10.1109/ICMTS.2015.7106109⟩. ⟨hal-02049575⟩
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