Investigation of HfO<inf>2</inf>/Ti based vertical RRAM - Performances and variability - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Investigation of HfO2/Ti based vertical RRAM - Performances and variability

Résumé

An easy-to-fabricate, low-cost, sidewall TiN/HfO 2 /Ti vertical resistive RAM (VRRAM) device is proposed. Devices with bottom electrode thickness down to 10nm were fabricated and characterized. Forming, SET and RESET voltages of respectively 2V, 0.5V and -0.5V were measured. A stable memory window of one decade was maintained after 10 5 s at 200°C. The impact of scaling on the operating voltages and memory resistance levels was evaluated, showing a SET and RESET voltage reduction as the cell diameter is reduced. Finally the cycle-to-cycle resistance variability was addressed.
Fichier non déposé

Dates et versions

hal-02049437 , version 1 (26-02-2019)

Identifiants

Citer

G. Piccolboni, G. Molas, C. Carabasse, J. F Nodin, C. Pellissier, et al.. Investigation of HfO2/Ti based vertical RRAM - Performances and variability. 2014 14th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2014, Jeju Island, South Korea. pp.134-138, ⟨10.1109/NVMTS.2014.7060867⟩. ⟨hal-02049437⟩
29 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More