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Communication Dans Un Congrès Année : 2014

A new approach for modeling drain current process variability applied to FDSOI technology

Résumé

This paper proposes a novel methodology for modeling process related FDSOI MOSFET drain current variability. The novelty of our methodology is to combine statistical analysis tools (RSM, Stepwise Regression (SWR) and DOE) with a simple analytical drain current model. Our approach is finally compared to conventional least square method (LSM) and SWR.
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hal-02048983 , version 1 (26-02-2019)

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Y. Denis, F. Monsieur, D. Petit, C. Tavernier, H. Jaouen, et al.. A new approach for modeling drain current process variability applied to FDSOI technology. 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.93-96, ⟨10.1109/ULIS.2014.6813924⟩. ⟨hal-02048983⟩
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