Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2006

Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation

Résumé

The sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluated by 3-D simulation. An in depth investigation of main internal parameters is performed to study the electrical response of the different device architectures under irradiation. The obtained results are in agreement with the electrical behavior trends of these devices.
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hal-02025180 , version 1 (19-02-2019)

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  • HAL Id : hal-02025180 , version 1

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K. Castellani-Couli, Daniela Munteanu, Jean-Luc Autran, Veronique Ferlet-Cavrois, P. Paillet, et al.. Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3265-3270. ⟨hal-02025180⟩
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