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Communication Dans Un Congrès Année : 2017

Back-side integration of Hybrid III–V on Silicon DBR lasers

Résumé

In this paper we demonstrate the monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer. This innovative approach allowed implementing CMOS compatible electric interconnects and optical sources on a same chip. The optical characterizations confirm the single wavelength behavior of the realized devices which present a SMSR higher than 35 dB and can be tuned over 4 nm, opening the route to a fully integrated optical transceiver on a Si platform.
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Dates et versions

hal-02019688 , version 1 (14-02-2019)

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Citer

J. Durel, B. Ben Bakir, C. Jany, S. Cremer, K. Hassan, et al.. Back-side integration of Hybrid III–V on Silicon DBR lasers. 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2017, Hsinchu, Taiwan. pp.1-2, ⟨10.1109/VLSI-TSA.2017.7942492⟩. ⟨hal-02019688⟩
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