Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015
Fichier non déposé

Dates et versions

hal-02016964 , version 1 (13-02-2019)

Identifiants

  • HAL Id : hal-02016964 , version 1

Citer

Ji-Young Yoon, Byeong Geun Kim, Ji-Eun Lee, Myung -Hyun Lee, Won- Seon Seo, et al.. Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface. International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨hal-02016964⟩
18 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More