The effect of the Ti getter layer and annealing on HfO2-based resistive random access memory studied by X-ray absorption, X-ray diffraction and electrical measurements - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

The effect of the Ti getter layer and annealing on HfO2-based resistive random access memory studied by X-ray absorption, X-ray diffraction and electrical measurements

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Matériaux
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hal-02016962 , version 1 (13-02-2019)

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  • HAL Id : hal-02016962 , version 1

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R. Viennet, Hubert Renevier, Eric Jalaguier, V. Jousseaume, P. Gonon, et al.. The effect of the Ti getter layer and annealing on HfO2-based resistive random access memory studied by X-ray absorption, X-ray diffraction and electrical measurements. E-MRS Spring Meeting,, Symp. M, May 2015, Lille, France. ⟨hal-02016962⟩
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