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Communication Dans Un Congrès Année : 2016

Fabrication of Si nanonet field effect transistors by microelectronic processes (invited)

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Matériaux
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hal-02016950 , version 1 (13-02-2019)

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  • HAL Id : hal-02016950 , version 1

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M. Legallais, P. Serre, Bassem Salem, T. Baron, V. Stambouli, et al.. Fabrication of Si nanonet field effect transistors by microelectronic processes (invited). EMN Meeting on Nanowires (EMN 2016), May 2016, Amsterdam, Netherlands. ⟨hal-02016950⟩
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