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Communication Dans Un Congrès Année : 2017

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

Résumé

Silicon nanowire networks (Silicon Nanonets) is an emerging candidate technology for sensor applications. In this work, we characterized FETs (Field Effect Transistor) employing Silicon Nanonet channels. First, we compared the channel impedance among three different silicon nanonet densities: low, medium and high. Second. We compared channel impedance for channel lengths 5µm, 15µm and 30µm. Third, we evaluated the FETs performance as photodiodes. Finally, we examined the long-term stability of the FETs characteristics. We found that shorter and higher density channels have lower impedance and higher current flow. We also measured the change in the drain current of the Si nanonet FET while the He-Ne CW laser with the wavelength of 632nm irradiated its. Impedance increased by about one order-of-magnitude after 6 months of storage in open air as a result of oxidation.

Domaines

Matériaux

Dates et versions

hal-02016904 , version 1 (13-02-2019)

Identifiants

Citer

Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, et al.. Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes. 4th International Electronic Conference on Sensors and Applications (ECSA-4), Nov 2017, internet environnement, United States. pp.124.1-6, ⟨10.3390/ecsa-4-04925⟩. ⟨hal-02016904⟩
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