Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2016

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

Fichier non déposé

Dates et versions

hal-02016591 , version 1 (12-02-2019)

Identifiants

  • HAL Id : hal-02016591 , version 1

Citer

J.A. Budagosky, N. Garro, A. Cros, A. Garcia-Cristobal, S. Founta, et al.. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field. Materials Science in Semiconductor Processing, 2016, 49, pp.76-80. ⟨hal-02016591⟩
18 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More