A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

Résumé

In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion gain of -3.8 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 25 mW. This doubler is fabricated in a 55 nm SiGe BiCMOS technology from STMicroelectronics with f t /f max 320/370 GHz respectively and an area of 1200×700 μm 2 including the pads.
Fichier non déposé

Dates et versions

hal-02012682 , version 1 (08-02-2019)

Identifiants

Citer

Walid Aouimeur, José Moron Guerra, Ayssar Serhan, Sylvie Lepilliet, Thomas Quémerais, et al.. A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS. 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, AZ, United States. pp.60-63, ⟨10.1109/SIRF.2017.7874371⟩. ⟨hal-02012682⟩
37 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More