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Communication Dans Un Congrès Année : 2017

A G band frequency quadrupler in 55 nm BiCMOS for bist applications

Résumé

In this paper, a frequency quadrupler based on a single ended frequency doubler, a new Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines and a balanced frequency doubler in G band is presented and analyzed for in-situ characterization applications. The experimental results of the frequency quadrupler exhibit at 180 GHz a peak output power of -4.5 dBm associate with a linear conversion gain of -5.5 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 39 mW. This quadrupler has been fabricated in the 55 nm SiGe BiCMOS technology from STMicroelectronics, the chip area is 1850×780 μm 2 including the pads.
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Dates et versions

hal-02012681 , version 1 (08-02-2019)

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Citer

Walid Aouimeur, Estelle Lauga-Larroze, Jean-Daniel Arnould, José Moron Guerra, Christophe Gaquière, et al.. A G band frequency quadrupler in 55 nm BiCMOS for bist applications. 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Apr 2017, Graz, Austria. pp.1-4, ⟨10.1109/INMMIC.2017.7927310⟩. ⟨hal-02012681⟩
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