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Communication Dans Un Congrès Année : 2015

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

Résumé

In order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN HEMT.
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Dates et versions

hal-02009897 , version 1 (06-02-2019)

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J. Lehmann, C. Leroux, M. Charles, A. Torres, E. Morvan, et al.. Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT. 2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩. ⟨hal-02009897⟩
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