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Communication Dans Un Congrès Année : 2015

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Résumé

In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.
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Dates et versions

hal-02009889 , version 1 (06-02-2019)

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Citer

J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, et al.. Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique. 2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩. ⟨hal-02009889⟩
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