Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET
Résumé
The supercoupling effect is demonstrated experimentally by monitoring the electron and hole currents in a field-effect transistor provided with p+ and n+ contacts. According to the polarity of the voltage applied to the front and back gates, only electrons or holes can be detected in 7-nm thick silicon layers. Thicker layers are not affected by supercoupling and can accommodate electrons and holes together.