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Communication Dans Un Congrès Année : 2016

Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

Résumé

We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z 2 -FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z 2 -FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.

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Dates et versions

hal-02006297 , version 1 (04-02-2019)

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H. El Dirani, M. Bawedin, K. Lee, M. Parihar, X. Mescot, et al.. Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, United States. pp.1-2, ⟨10.1109/S3S.2016.7804402⟩. ⟨hal-02006297⟩
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