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Communication Dans Un Congrès Année : 2016

Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures

Résumé

Lateral N+/n/N+ InGaAs-on-insulator structures are successfully fabricated by direct wafer bonding and selective regrowth. Electrical characterizations are performed for varying n-layer thickness from fully-depleted films up to the limit of partial depletion. Measurements under externally applied uniaxial tensile strain show an improved drive current.
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Dates et versions

hal-02006249 , version 1 (04-02-2019)

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L. Czornomaz, V. Djara, V. Deshpande, D. Caimi, L. Pirro, et al.. Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.214-217, ⟨10.1109/ULIS.2016.7440091⟩. ⟨hal-02006249⟩
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