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Communication Dans Un Congrès Année : 2015

Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

Résumé

A full front gate voltage range parameter extraction technique is developed taking into account both the back gate voltages and the channel length. The method is easily applicable to extract precisely all electrical parameters of advanced nano-scale FDSOI MOSFETs.
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Dates et versions

hal-02001968 , version 1 (31-01-2019)

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Citer

T. Karatsori, C. Theodorou, E. Ioannidis, S. Haendler, E. Josse, et al.. Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices. 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩. ⟨hal-02001968⟩
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